Si3483CDV

New Product P-Channel 30-V (D-S) MOSFET Si3483CDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.034 at VGS = - 10 V - 30 0.053 at VGS = - 4.5 V ID (A) - 8a -7 Qg (Typ.) 11.5 nC FEATURES TrenchFET® Power MOSFET APPLICATIONS Load Switch RoHS COMPLIANT 3 mm TSOP-6 Top View 16 25 34 2.85 mm Marking Code AU XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3483CDV-T1-E3 (Lead (Pb)-free) (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 30 ± 20 - 8a -7 - 6.1b, c - 4.9b, c - 25 - 3.5 - 1.67b, c 4.2 2.7 2.0b, c 1.3b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Symbol RthJA RthJF Typical 55 25 Maximum 62.5 30 Unit V A W °C Unit °C/W Document Number: 68603 S-80893-Rev. A, 21-Apr-08 www.vishay.com 1 Si3483CDV Vishay Siliconix New Product SPECIFICATIONS TJ = 25 ...