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1N5620

EIC

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5614 - 1N5622 GLASS PASSIVATED JUNCTION SILICON RE...


EIC

1N5620

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5614 - 1N5622 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * Glass passivated chip * High forward surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.161 (4.1) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 50 μA Maximum Average Forward Current at Ta = 55 °C at Ta = 100 °C Peak Forward Surge Current (Ta = 100 °C,f = 60 Hz, IF(AV) = 750 mA for ten 8.3 ms surges @ 1 minute intervals) Minimum Forward Voltage at I F = 3.0 A Maximum Forward Voltage at IF = 3.0A Maximum Reverse Current at VRWM, Ta = 25 °C at VRWM, Ta = 100 °C Maximum Reverse Recovery Time ( Note 1 ) Thermal Resistance , Junction to Lead (Note 2) Operating Junction and Storage Temperature Range SYMBOL 1N56...




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