FCH104N60

FCH104N60 — N-Channel SuperFET® II MOSFET FCH104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ June 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 96 mΩ Ultra Low Gate Charge (Typ. Qg = 63 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) 100% Avalanche Tested RoHS Compliant Applications Telecom / Sever Power Supplies Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. D G D S TO-247 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Tempe...