BF908

DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Dual-gate MOS-FETs Product specification BF908; BF908R FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. handbook, halfpage 4 3 1 Top view 2 g2 g1 MAM039 d s,b DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT143) and symbol; BF908. handbook, halfpag3e 4 d g2 g1 PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj yfs Cig1-s Crs F drain-source voltage drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure 2 Top view 1 MAM040 s,b Fig.2 Simp...