DISCRETE SEMICONDUCTORS
DATA SHEET
BF908; BF908R Dual-gate MOS-FETs
Product specification Supersedes data of April 1995 ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BF908; BF908R Dual-gate MOS-FETs
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07
1996 Jul 30
Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF908; BF908R
FEATURES
High forward transfer admittance Short channel
transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
handbook, halfpage
4
3
1
Top view
2
g2 g1
MAM039
d s,b
DESCRIPTION
Depletion type field-effect
transistor in a plastic microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
Fig.1 Simplified outline (SOT143) and symbol; BF908.
handbook, halfpag3e
4
d
g2 g1
PINNING
PIN 1 2 3 4
SYMBOL
DESCRIPTION
s, b source
d drain
g2 gate 2 g1 gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS ID Ptot Tj yfs Cig1-s Crs F
drain-source voltage drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure
2
Top view
1
MAM040
s,b
Fig.2 Simp...