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SQ1440EH
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on...
www.vishay.com
SQ1440EH
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
Package
SOT-363 SC-70 Single (6 leads)
S 4 D 5 D 6
60 0.120 0.150
1.7 Single SC-70
FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
G
Marking Code: 9O
1 D Top View
2 D
3 G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 1.7 1.7 1.7 6.7 10 5 3.3 1.1
-55 to +175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient Junction-to-Foot (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
PCB Mount c
SYMBOL RthJA RthJF
LIMIT 125 45
UNIT °C/W
S15-2365 Rev. A, 12-Oct-15
1
Document Number: 65884
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT T...