SQ1912AEEH

www.vishay.com SQ1912AEEH Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A) Configuration SOT-363 SC-70 Dual (6 leads) S2 G2 4 D1 5 6 20 0.280 0.360 0.450 0.8 Dual Marking Code: 8R 1 S1 Top View 2 G1 3 D2 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg tested Typical ESD protection: 800 V Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 3k G1 3k G2 S1 S2 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SC-70 SQ1912AEEH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C ID IS IDM Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 20 ± 12 0.8 0.8 0.8 3 1.5 0.5 -55 to +175 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJF LIMIT 220 100 UNIT °C/W S15-1251 Rev. A, 01-Jun-15 1 Document Number: 62983 For technical questions, contact: [email protected] ...