SQ2301ES

www.vishay.com SQ2301ES Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configuration - 20 0.120 0.180 - 3.9 Single FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) S G1 S2 3D G Top View SQ2301ES Marking Code: 8Axxx ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D P-Channel MOSFET SOT-23 SQ2301ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 20 ±8 - 3.9 - 2.2 - 3.7 - 15 -9 4 3 1 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W S11-2111-Rev. B, 07-Nov-11 1 Document Number: 66718 THIS DOCUMEN...