SQ2308CES

www.vishay.com SQ2308CES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration SOT-23 (TO-236) 60 0.150 0.164 2.3 Single FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualified c 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D D 3 Marking Code: 8X 1 G Top View 2 S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2308CES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation a TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 2.3 1.3 2.4 9 7 2.5 2 0.6 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. SYMBOL RthJA RthJF LIMIT 120 80 UNIT °C/W S14-0552-Rev. A, 24-Mar-14 1 Document Number: 63877 For technical questions, contact: automostechsupport@...