Automotive P-Channel MOSFET
www.vishay.com
SQ2309ES
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on...
Description
www.vishay.com
SQ2309ES
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
- 60 0.335 0.500 - 1.7 Single
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
S
G1 S2
3D
G
Top View SQ2309ES* * Marking Code:8Pxxx
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
SOT-23 SQ2309ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction) Pulsed Drain Currenta
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationa
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT - 60 ± 20 - 1.7 -1 - 2.6 - 6.8 - 15 11
2 0.6 - 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing.
PCB Mountb
SYMBOL RthJA RthJF
LIMIT 166 73
UNIT V
A
mJ W °C
UNIT °C/W
S11-2111-Rev. B, 07-Nov-11
1
Document Number: 67024
THIS DOCUMENT IS SUBJECT TO...
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