SQ2315ES

www.vishay.com SQ2315ES Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -4.5 V RDS(on) (Ω) at VGS = -2.5 V RDS(on) (Ω) at VGS = -1.8 V ID (A) Configuration Package -12 0.050 0.068 0.100 -5 Single SOT-23 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Compliant to RoHS Directive 2002/95/EC Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (TO-236) S D 3 G Marking Code: 8D 1 G Top View 2 S P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -12 ±8 -5 -3 -2.5 -20 -11 6 2 0.67 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PCB Mount b SYMBOL RthJA RthJF LIMIT 175 75 UNIT V A mJ W °C UNIT °C/W S15-2411-Rev. D, 07-Oct-15 1 Document Number: 71507 For technical questions, contact: [email protected]...