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SQ2325ES Dataheets PDF



Part Number SQ2325ES
Manufacturers Vishay
Logo Vishay
Description Automotive P-Channel MOSFET
Datasheet SQ2325ES DatasheetSQ2325ES Datasheet (PDF)

www.vishay.com SQ2325ES Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V ID (A) Configuration SOT-23 (TO-236) D 3 1 G Top View Marking Code: 8Rxxx 2 S -150 1.77 -0.84 Single S G D P-Channel MOSFET FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912          ORDERING INFORMATION Package Lead (.

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www.vishay.com SQ2325ES Vishay Siliconix Automotive P-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V ID (A) Configuration SOT-23 (TO-236) D 3 1 G Top View Marking Code: 8Rxxx 2 S -150 1.77 -0.84 Single S G D P-Channel MOSFET FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912          ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2325ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -150 ± 20 -0.84 -0.48 -3.7 -2 4.8 1.12 3 1 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). PCB Mount b SYMBOL RthJA RthJF LIMIT 166 50 UNIT V A mJ W °C UNIT °C/W S15-0188-Rev. B, 16-Feb-15 1 Document Number: 67847 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQ2325ES Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = -250 μA VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = -150 V VGS = 0 V VDS = -150 V, TJ = 125 °C VGS = 0 V VDS = -150 V, TJ = 175 °C VGS = -10 V VDS  5 V VGS = -10 V ID = -0.5 A VGS = -10 V ID = -0.5 A, TJ = 125 °C VGS = -10 V ID = -0.5 A, TJ = 175 °C VDS = -15 V, ID = -0.5 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b VGS = 0 V VDS = -50 V, f = 1 MHz VGS = -10 V VDS = -75 V, ID = -0.5 A f = 1 MHz VDD = -75 V, RL = 150  ID  -0.5 A, VGEN = -10 V, Rg = 1  Pulsed Current a ISM Forward Voltage VSD Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     IF = -0.5 A, VGS = 0 V MIN. -150 -2.5 -0.8 - 2.8 - - TYP. MAX. UNIT -V -3 -3.5 - ± 100 nA - -1 - -50 μA - -150 - -A 1.3 1.77 - 3.4  - 4.4 2.2 - S 200 250 20 25 pF 17 22 7.4 10 1.1 - nC 2.9 3.9 6.1  8 12 14 18 ns 15 20 10 14 - -2 -0.8 -1.2 A V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0188-Rev. B, 16-Feb-15 2 Document Number: 67847 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 1.5 SQ2325ES Vishay Siliconix ID - Drain Current (A) ID - Drain Current (A) 1.6 1.2 1.2 VGS = 10 V thru 5 V 0.9 0.8 0.4 0.0 0 3 VGS = 4 V 1234 VDS - Drain-to-Source Voltage (V) Output Characteristics 5 0.6 TC = 25 °C 0.3 TC = 125 °C 0.0 0 2 TC = -55 °C 468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 10 gfs - Transconductance (S) 2 TC = 25 °C 2 1 1 TC = -55 °C TC = 125 °C RDS - On-Resistance (Ω) 4 3 2 1 VGS = 6 V VGS = 10 V 0 0.0 0.3 0.6 0.9 ID - Drain Current (A) Transconductance 1.2 1.5 0 0.0 0.4 0.8 1.2 ID - Drain Current (A) On-Resistance vs. Drain Current 1.6 C - Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 Ciss Crss Coss 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 50 VGS - Gate-to-Source Voltage (V) 10 ID = 0.5 A 8 6 VDS = 75 V 4 2 0 02468 Qg - Total Gate Charge (nC) Gate Charge 10 S15-0188-Rev. B, 16-Feb-15 3 Document Number:.


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