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SQ2325ES
Vishay Siliconix
Automotive P-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V ID (A) Configuration
SOT-23 (TO-236)
D 3
1 G Top View
Marking Code: 8Rxxx
2 S
-150 1.77 -0.84 Single
S
G
D P-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
SOT-23 SQ2325ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT -150 ± 20 -0.84 -0.48 -3.7
-2 4.8 1.12 3 1 -55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain)
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material).
PCB Mount b
SYMBOL RthJA RthJF
LIMIT 166 50
UNIT V
A
mJ W °C
UNIT °C/W
S15-0188-Rev. B, 16-Feb-15
1
Document Number: 67847
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQ2325ES
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -150 V
VGS = 0 V VDS = -150 V, TJ = 125 °C
VGS = 0 V VDS = -150 V, TJ = 175 °C
VGS = -10 V
VDS 5 V
VGS = -10 V
ID = -0.5 A
VGS = -10 V ID = -0.5 A, TJ = 125 °C
VGS = -10 V ID = -0.5 A, TJ = 175 °C
VDS = -15 V, ID = -0.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = -50 V, f = 1 MHz
VGS = -10 V VDS = -75 V, ID = -0.5 A
f = 1 MHz
VDD = -75 V, RL = 150 ID -0.5 A, VGEN = -10 V, Rg = 1
Pulsed Current a
ISM
Forward Voltage
VSD
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
IF = -0.5 A, VGS = 0 V
MIN.
-150 -2.5
-0.8 -
2.8 -
-
TYP. MAX. UNIT
-V
-3 -3.5
- ± 100 nA
- -1
- -50 μA
- -150
- -A
1.3 1.77
- 3.4
- 4.4
2.2 -
S
200 250 20 25 pF 17 22 7.4 10 1.1 - nC 2.9 3.9 6.1 8 12 14 18
ns 15 20 10 14
- -2 -0.8 -1.2
A V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-0188-Rev. B, 16-Feb-15
2
Document Number: 67847
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0 1.5
SQ2325ES
Vishay Siliconix
ID - Drain Current (A)
ID - Drain Current (A)
1.6 1.2
1.2
VGS = 10 V thru 5 V
0.9
0.8 0.4 0.0
0
3
VGS = 4 V
1234 VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0.6 TC = 25 °C
0.3 TC = 125 °C
0.0 0
2
TC = -55 °C 468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
10
gfs - Transconductance (S)
2 TC = 25 °C
2
1
1
TC = -55 °C TC = 125 °C
RDS - On-Resistance (Ω)
4 3 2 1
VGS = 6 V
VGS = 10 V
0 0.0
0.3 0.6 0.9 ID - Drain Current (A)
Transconductance
1.2
1.5
0 0.0
0.4 0.8 1.2 ID - Drain Current (A)
On-Resistance vs. Drain Current
1.6
C - Capacitance (pF)
400 350 300 250 200 150 100
50 0 0
Ciss
Crss Coss
10 20 30 40 VDS - Drain-to-Source Voltage (V)
Capacitance
50
VGS - Gate-to-Source Voltage (V)
10 ID = 0.5 A
8
6
VDS = 75 V
4
2
0 02468 Qg - Total Gate Charge (nC)
Gate Charge
10
S15-0188-Rev. B, 16-Feb-15
3
Document Number:.