SQ2361ES

www.vishay.com SQ2361ES Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration SOT-23 (TO-236) D 3 1 G Top View Marking Code: 9Dxxx 2 S -60 0.177 0.246 -2.8 Single S G D P-Channel MOSFET FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912           ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2361ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -2.8 -1.6 -2.5 -11 -12.5 7.8 2 0.67 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJF LIMIT 175 75 UNIT °C/W S15-1208-Rev. A, 21-May-15 1 Document Number: 66894 For technical questions, contact: [email protected] THIS DOC...