SQ2362ES

www.vishay.com SQ2362ES Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package SOT-23 (TO-236) 60 0.068 0.075 4.3 Single SOT-23 D FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 3 G 2 S 1 G Top View Marking Code: 8Z S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 4.3 2.5 3.8 17 12 7 3 1 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount b Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W S15-1820-Rev. A, 10-Aug-15 1 Document Number: 62913 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPE...