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SQ2398ES
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package
SOT-23 (TO-236)
D 3
1 G Top View
Marking Code: 9E
2 S
100 0.300 1.67 Single SOT-23
D
G
S N-Channel MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 100 ± 20 1.6 0.9 2.5 6.6 5 1.2 2 0.6
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain)
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing.
PCB Mount b
SYMBOL RthJA RthJF
LIMIT 130 75
UNIT V
A
mJ W °C
UNIT °C/W
S15-1777-Rev. A, 30-Jul-15
1
Document Number: 67117
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQ2398ES
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b
IGSS IDSS ID(on) RDS(on) gfs
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 100 V
VGS = 0 V VDS = 100 V, TJ = 125 °C
VGS = 0 V VDS = 100 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 1.5 A
VGS = 10 V
ID = 1.5 A, TJ = 125 °C
VGS = 10 V
ID = 1.5 A, TJ = 175 °C
VDS = 15 V, ID = 1.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 50 V, f = 1 MHz
Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c
Crss
Qg
Qgs
VGS = 10 V
VDS = 50 V, ID = 1.5 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
f = 1 MHz
VDD = 50 V, RL = 33 ID 1.5 A, VGEN = 10 V, Rg = 1
Pulsed Current a
ISM
Forward Voltage
VSD IF = 1.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
100 2.5
5 -
2.9 -
-
TYP. MAX. UNIT
-
3.0
0.240 3
-
3.5
± 100 1 50
150 -
0.300 0.552 0.720
-
V nA μA A S
152 28 - pF 12 2.3 3.4 0.7 - nC 1.1 5.8 8.7 5 6.9 18 24
ns 79 17 23
-8 0.8 1.2
A V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-1777-Rev. A, 30-Jul-15
2
Document Number: 67117
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
VGS = 10 V thru 7 V 5
VGS = 6 V 4
6 5 4
SQ2398ES
Vishay Siliconix
ID - Drain Current (A)
ID - Drain Current (A)
33
TC = 25 °C
2
VGS = 5 V
2
1
VGS = 4 V, 3 V 0
012345 VDS - Drain-to-Source Voltage (V)
Output Characteristics
1 TC = 125 °C
TC = -55 °C
0 02468
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
RDS(on) - On-Resistance (Ω)
1.0
0.8
0.6
VGS = 6 V 0.4
0.2
0.0 0
VGS = 10 V
1234 ID - Drain Current (A)
5
On-Resistance vs. Drain Current
6
C - Capacitance (pF)
140
120
100
80
Ciss 60
Coss 40
20
0 0
Crss
20 40 60 80 VDS - Drain-to-Source Voltage (V)
Capacitance
100
10
ID = 1.5 A VDS = 50 V 8
2.5 ID = 1.5 A
2.1
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
6 1.7 VGS =10 V
4 1.3 VGS = 4.5 V
2 0.9
0 0.0
0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC)
2.5
0.5 -50 -25
0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1777-Rev. A, 30-Jul-15
3
Document Number: 67117
For.