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SQ2398ES Dataheets PDF



Part Number SQ2398ES
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQ2398ES DatasheetSQ2398ES Datasheet (PDF)

www.vishay.com SQ2398ES Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package SOT-23 (TO-236) D 3 1 G Top View Marking Code: 9E 2 S 100 0.300 1.67 Single SOT-23 D G S N-Channel MOSFET FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912              ABSOLUTE MAXIM.

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www.vishay.com SQ2398ES Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package SOT-23 (TO-236) D 3 1 G Top View Marking Code: 9E 2 S 100 0.300 1.67 Single SOT-23 D G S N-Channel MOSFET FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912              ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 100 ± 20 1.6 0.9 2.5 6.6 5 1.2 2 0.6 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PCB Mount b SYMBOL RthJA RthJF LIMIT 130 75 UNIT V A mJ W °C UNIT °C/W S15-1777-Rev. A, 30-Jul-15 1 Document Number: 67117 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQ2398ES Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b IGSS IDSS ID(on) RDS(on) gfs VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 100 V VGS = 0 V VDS = 100 V, TJ = 125 °C VGS = 0 V VDS = 100 V, TJ = 175 °C VGS = 10 V VDS  5 V VGS = 10 V ID = 1.5 A VGS = 10 V ID = 1.5 A, TJ = 125 °C VGS = 10 V ID = 1.5 A, TJ = 175 °C VDS = 15 V, ID = 1.5 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V VDS = 50 V, f = 1 MHz Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Crss Qg Qgs VGS = 10 V VDS = 50 V, ID = 1.5 A Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b f = 1 MHz VDD = 50 V, RL = 33  ID  1.5 A, VGEN = 10 V, Rg = 1  Pulsed Current a ISM Forward Voltage VSD IF = 1.5 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     MIN. 100 2.5 5 - 2.9 - - TYP. MAX. UNIT - 3.0 0.240 3 - 3.5 ± 100 1 50 150 - 0.300 0.552 0.720 - V nA μA A  S 152 28 - pF 12 2.3 3.4 0.7 - nC 1.1 5.8 8.7  5 6.9 18 24 ns 79 17 23 -8 0.8 1.2 A V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1777-Rev. A, 30-Jul-15 2 Document Number: 67117 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 VGS = 10 V thru 7 V 5 VGS = 6 V 4 6 5 4 SQ2398ES Vishay Siliconix ID - Drain Current (A) ID - Drain Current (A) 33 TC = 25 °C 2 VGS = 5 V 2 1 VGS = 4 V, 3 V 0 012345 VDS - Drain-to-Source Voltage (V) Output Characteristics 1 TC = 125 °C TC = -55 °C 0 02468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 RDS(on) - On-Resistance (Ω) 1.0 0.8 0.6 VGS = 6 V 0.4 0.2 0.0 0 VGS = 10 V 1234 ID - Drain Current (A) 5 On-Resistance vs. Drain Current 6 C - Capacitance (pF) 140 120 100 80 Ciss 60 Coss 40 20 0 0 Crss 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance 100 10 ID = 1.5 A VDS = 50 V 8 2.5 ID = 1.5 A 2.1 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 1.7 VGS =10 V 4 1.3 VGS = 4.5 V 2 0.9 0 0.0 0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC) 2.5 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1777-Rev. A, 30-Jul-15 3 Document Number: 67117 For.


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