SQ3410EV

www.vishay.com SQ3410EV Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0175 0.0213 8 Single FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TSOP-6 Top V iew (1, 2, 5, 6) D 3 mm 16 25 (3) G 34 2.85 mm Marking Code: 8Gxxx ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free (4) S N-Channel MOSFET TSOP-6 SQ3410EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 8 6.8 6.3 32 22 24 5 1.6 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S12-1169-Rev. A, 28-May-12 1 Document Number: 67342 For technic...