SQ3418EV

www.vishay.com SQ3418EV Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package TSOP-6 Single S 4 D 5 D 6 40 0.032 0.042 8 Single TSOP-6 (1, 2, 5, 6) D FEATURES TrenchFET® power MOSFET AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (3) G 1 D Top View Marking Code: 8P 2 D 3 G (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 8 5 6 32 13.5 9.1 5 1.6 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S15-1989-Rev. A, 24-Aug-15 1 Document Number: 63412 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJ...