SQ3426EV

www.vishay.com SQ3426EV Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration TSOP-6 Single S 4 D 5 D 6 1 D Top View Marking Code: 8Q 2 D 3 G 60 0.042 0.063 7 Single (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3426EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) TC = 25 °C TC = 125 °C Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation a TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 6 29 10 5 5 1.6 - 55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). PCB Mount b SYMBOL RthJA RthJF LIMIT 110 30 UNIT V A mJ W °C UNIT °C/W S15-2119-Rev. B, 07-Sep-15 1 Document Number: 65107 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS ...