SQ3427EV

www.vishay.com SQ3427EV Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package TSOP-6 Single S 4 D 5 D 6 1 D Top View 2 D 3 G -60 0.095 0.135 -5.3 Single TSOP-6 (1, 2, 5, 6) D (3) G (4) S P-Channel MOSFET FEATURES TrenchFET® power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912              Marking Code: 8R ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -5.3 -3 -6.3 -21 -21 22 5 1.6 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S15-1676-Rev. A, 16-Jul-15 1 Document Number: 67987 For technical questions, contact: [email protected] THIS DOCUMEN...