SQ3985EV

www.vishay.com SQ3985EV Vishay Siliconix Automotive Dual P-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -4.5 V RDS(on) (Ω) at VGS = -2.5 V RDS(on) (Ω) at VGS = -1.8 V ID (A) Configuration Package -20 0.145 0.200 0.300 -3.9 Dual TSOP-6 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TSOP-6 Dual D2 S1 4 D1 5 6 S1 S2 G1 G2 Marking Code: 8T 1 G1 Top View 2 S2 3 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C VDS VGS ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range IAS EAS PD TJ, Tstg LIMIT -20 ±8 -3.9 -2.2 -3.7 -15 -8.5 3.6 3 1 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJC LIMIT 166 50 UNIT °C/W S15-1922-Rev. A, 11-Aug-15 1 Document Number: 63249 For technical questions, contact: automostechsupport@vishay.c...