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SQ4184EY
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package
40 0.0046 0.0056
29 Single SO-8
FEATURES • TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
SO-8 Single D D5 D6 D7 8
D G
4 3G 2S 1S S Top View
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 40 ± 20 29 16.9 6.4 84 50 125 7.1 2.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient
PCB Mount b
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material).
SYMBOL RthJA RthJF
LIMIT 80 21
UNIT V
A
mJ W °C
UNIT °C/W
S15-2285-Rev. C, 28-Sep-15
1
Document Number: 67375
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQ4184EY
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS IDSS ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V
ID = 14 A
VGS = 10 V
ID = 14 A, TJ = 125 °C
VGS = 10 V
ID = 14 A, TJ = 175 °C
VGS = 4.5 V
ID = 12 A
VDS = 15 V, ID = 14 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
VGS = 0 V
VDS = 20 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 5 A
f = 1 MHz
VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
IF = 6 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
40 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
- - 50 μA
- - 250
30 -
-A
- 0.0036 0.0046
- - 0.0070 Ω
- - 0.0083
- 0.0046 0.0056
- 78 - S
- 4319 5400 - 512 640 pF - 240 300 - 72 110 - 13 - nC - 11 0.8 1.6 3.9 Ω - 15 25 - 30 45
ns - 43 66 - 15 25
- - 84 A - 0.75 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-2285-Rev. C, 28-Sep-15
2
Document Number: 67375
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SQ4184EY
Vishay Siliconix
75 VGS = 10 V thru 4 V
60
75 60
ID - Drain Current (A)
ID - Drain Current (A)
45
30
15
0 0
VGS = 3 V
2468 VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
45
30
15
0 0
TC = 25 °C
TC = 125 °C
TC = -55 °C
1234 VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
gfs - Transconductance (S)
1.5 1.2 0.9
TC = 25 °C 0.6
150
TC = -55 °C 120
TC = 25 °C
90
TC = 125 °C 60
ID - Drain Current (A)
0.3
0.0 0
TC = 125 °C
TC = -55 °C
1234 VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
30
0 0
4 8 12 16 ID - Drain Current (A)
Transconductance
20
0.015
6000
RDS(on) - On-Resistance (Ω)
0.012
0.009
0.006 0.003
VGS = 4.5 V VGS = 10 V
0.000 0
10 20 30 40 ID - Drain Current (A)
On-Resistance vs. Drain Current
50
C - Capacitance (pF)
5000 4000
Ciss
3000
2000
1000
0 0
Crss
Coss
8 16 24 32 VDS - Drain-to-Source Voltage (V)
Capacitance
40
S15-2285-Rev. C, 28-Sep-15
3
Do.