DatasheetsPDF.com

SQ4184EY Dataheets PDF



Part Number SQ4184EY
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQ4184EY DatasheetSQ4184EY Datasheet (PDF)

www.vishay.com SQ4184EY Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 40 0.0046 0.0056 29 Single SO-8 FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Single D D5 D6 D7 8 D G 4 3G 2S 1S S Top View N-Channel MOSFET S ABSOLUTE MAXIMUM RA.

  SQ4184EY   SQ4184EY



Document
www.vishay.com SQ4184EY Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration Package 40 0.0046 0.0056 29 Single SO-8 FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Single D D5 D6 D7 8 D G 4 3G 2S 1S S Top View N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 29 16.9 6.4 84 50 125 7.1 2.3 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mount b Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJF LIMIT 80 21 UNIT V A mJ W °C UNIT °C/W S15-2285-Rev. C, 28-Sep-15 1 Document Number: 67375 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQ4184EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 40 V VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C VGS = 10 V VDS ≥ 5 V VGS = 10 V ID = 14 A VGS = 10 V ID = 14 A, TJ = 125 °C VGS = 10 V ID = 14 A, TJ = 175 °C VGS = 4.5 V ID = 12 A VDS = 15 V, ID = 14 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 5 A f = 1 MHz VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω IF = 6 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. MIN. TYP. MAX. UNIT 40 - - V 1.5 2.0 2.5 - - ± 100 nA - -1 - - 50 μA - - 250 30 - -A - 0.0036 0.0046 - - 0.0070 Ω - - 0.0083 - 0.0046 0.0056 - 78 - S - 4319 5400 - 512 640 pF - 240 300 - 72 110 - 13 - nC - 11 0.8 1.6 3.9 Ω - 15 25 - 30 45 ns - 43 66 - 15 25 - - 84 A - 0.75 1.2 V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2285-Rev. C, 28-Sep-15 2 Document Number: 67375 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) SQ4184EY Vishay Siliconix 75 VGS = 10 V thru 4 V 60 75 60 ID - Drain Current (A) ID - Drain Current (A) 45 30 15 0 0 VGS = 3 V 2468 VDS - Drain-to-Source Voltage (V) Output Characteristics 10 45 30 15 0 0 TC = 25 °C TC = 125 °C TC = -55 °C 1234 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics gfs - Transconductance (S) 1.5 1.2 0.9 TC = 25 °C 0.6 150 TC = -55 °C 120 TC = 25 °C 90 TC = 125 °C 60 ID - Drain Current (A) 0.3 0.0 0 TC = 125 °C TC = -55 °C 1234 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 30 0 0 4 8 12 16 ID - Drain Current (A) Transconductance 20 0.015 6000 RDS(on) - On-Resistance (Ω) 0.012 0.009 0.006 0.003 VGS = 4.5 V VGS = 10 V 0.000 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current 50 C - Capacitance (pF) 5000 4000 Ciss 3000 2000 1000 0 0 Crss Coss 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance 40 S15-2285-Rev. C, 28-Sep-15 3 Do.


SQ4182EY SQ4184EY SQ4282EY


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)