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SQ4282EY
Vishay Siliconix
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
30 0.0123 0.0135
8 Dual
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
SO-8
D1 D2
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
G1 G2
S1 S2 N-Channel MOSFET N-Channel MOSFET
SO-8 SQ4282EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current
TC = 25 °Ca TC = 125 °C
VGS ID
Continuous Source Current (Diode Conduction) Pulsed Drain Currenta
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationa
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 30 ± 20 8 8 3.5 32 34 58 3.9 1.3
- 55 to + 175
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient Junction-to-Foot (Drain)
Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material).
PCB Mountb
SYMBOL RthJA RthJF
LIMIT 120 38
UNIT °C/W
S12-2200-Rev. B, 24-Sep-12
1
Document Number: 63582
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQ4282EY
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage Gate-Source Leakage
VGS(th) IGSS
VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 30 V
Zero Gate Voltage Drain Current On-State Drain Currenta
IDSS ID(on)
VGS = 0 V VGS = 0 V VGS = 10 V
VDS = 30 V, TJ = 125 °C VDS = 30 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V VGS = 10 V VGS = 10 V
ID = 15 A ID = 15 A, TJ = 125 °C ID = 15 A, TJ = 175 °C
Forward Transconductanceb Dynamicb
VGS = 4.5 V
ID = 14 A
gfs VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 10 V
VDS = 20 V, ID = 11 A
f = 1 MHz
VDD = 15 V, RL = 1.67 ID 9 A, VGEN = 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = 8 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
30 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
- - 50 μA
- - 250
30 -
-A
- 0.0100 0.0123
- - 0.0176
- - 0.0210
- 0.0110 0.0135
- 67 - S
- 1893 2367
- 396 495 pF
- 139 173
- 31.5 47
- 6.4 - nC
- 4-
2.45 4.91 7.5
- 10 15
- 11 17 ns
- 34 51
- 8 12
- - 32 A - 0.76 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S12-2200-Rev. B, 24-Sep-12
2
Document Number: 63582
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
60 VGS = 10 V thru 4 V
48
50 40
SQ4282EY
Vishay Siliconix
ID - Drain Current (A)
ID - Drain Current (A)
36 30
24 12
0 0
1.0 0.8
VGS = 3 V
2468 VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
20
10 TC = 125 °C
TC = 25 °C
TC = - 55 °C 0
02468 VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
100 80 TC = 25 °C
TC = - 55 °C
10
gfs - Transconductance (S)
ID - Drain Current (A)
0.6 TC = 25 °C
0.4
60 TC = 125 °C
40
0.2 0.0
0
TC = 125 °C
TC = - 55 °C
1234 VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.025
0.020
20 0 0
2500 2000
5 10 15 20 ID - Drain Current (A)
Transconductance
25
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.015 0.010 0.005
VGS = 4.5 V VGS = 10 V
0.000 0
8 16 24 32 ID - Drain Current (A)
On-Resistance vs. Drain Current
40
1500 .