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SQ4282EY Dataheets PDF



Part Number SQ4282EY
Manufacturers Vishay
Logo Vishay
Description Automotive Dual N-Channel MOSFET
Datasheet SQ4282EY DatasheetSQ4282EY Datasheet (PDF)

www.vishay.com SQ4282EY Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0123 0.0135 8 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SO-8 D1 D2 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 ORDERING INFORMATION Package Lead (Pb)-.

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www.vishay.com SQ4282EY Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0123 0.0135 8 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SO-8 D1 D2 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET SO-8 SQ4282EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 8 8 3.5 32 34 58 3.9 1.3 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). PCB Mountb SYMBOL RthJA RthJF LIMIT 120 38 UNIT °C/W S12-2200-Rev. B, 24-Sep-12 1 Document Number: 63582 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQ4282EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 30 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VGS = 0 V VGS = 0 V VGS = 10 V VDS = 30 V, TJ = 125 °C VDS = 30 V, TJ = 175 °C VDS5 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 10 V ID = 15 A ID = 15 A, TJ = 125 °C ID = 15 A, TJ = 175 °C Forward Transconductanceb Dynamicb VGS = 4.5 V ID = 14 A gfs VDS = 15 V, ID = 15 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V VDS = 15 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec td(on) Rise Timec tr Turn-Off Delay Timec td(off) Fall Timec tf Source-Drain Diode Ratings and Characteristicsb VGS = 10 V VDS = 20 V, ID = 11 A f = 1 MHz VDD = 15 V, RL = 1.67  ID  9 A, VGEN = 10 V, Rg = 1  Pulsed Currenta ISM Forward Voltage VSD IF = 8 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     MIN. TYP. MAX. UNIT 30 - - V 1.5 2.0 2.5 - - ± 100 nA - -1 - - 50 μA - - 250 30 - -A - 0.0100 0.0123 - - 0.0176  - - 0.0210 - 0.0110 0.0135 - 67 - S - 1893 2367 - 396 495 pF - 139 173 - 31.5 47 - 6.4 - nC - 4- 2.45 4.91 7.5  - 10 15 - 11 17 ns - 34 51 - 8 12 - - 32 A - 0.76 1.2 V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2200-Rev. B, 24-Sep-12 2 Document Number: 63582 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 60 VGS = 10 V thru 4 V 48 50 40 SQ4282EY Vishay Siliconix ID - Drain Current (A) ID - Drain Current (A) 36 30 24 12 0 0 1.0 0.8 VGS = 3 V 2468 VDS - Drain-to-Source Voltage (V) Output Characteristics 10 20 10 TC = 125 °C TC = 25 °C TC = - 55 °C 0 02468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 100 80 TC = 25 °C TC = - 55 °C 10 gfs - Transconductance (S) ID - Drain Current (A) 0.6 TC = 25 °C 0.4 60 TC = 125 °C 40 0.2 0.0 0 TC = 125 °C TC = - 55 °C 1234 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 0.025 0.020 20 0 0 2500 2000 5 10 15 20 ID - Drain Current (A) Transconductance 25 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.015 0.010 0.005 VGS = 4.5 V VGS = 10 V 0.000 0 8 16 24 32 ID - Drain Current (A) On-Resistance vs. Drain Current 40 1500 .


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