SQ4284EY

www.vishay.com SQ4284EY Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.0135 0.0148 8 Dual FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S1 1 G1 2 S2 3 G2 4 SO-8 Top View D1 D2 8 D1 7 D1 6 D2 G1 5 D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4284EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 8 7.4 3.5 32 48 115 3.9 1.3 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). PCB Mountb SYMBOL RthJA RthJF LIMIT 120 38 UNIT V A mJ W °C UNIT °C/W S13-0873-Rev. D, 22-Apr-13 1 Document Number: 67334 For technical questions, contact: [email protected] T...