SQ4410EY

www.vishay.com SQ4410EY Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration SO-8 30 0.012 0.020 15 Single D FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualified 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S1 S2 S3 G4 Top View 8D 7D 6D 5D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4410EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 15 9 4.5 60 38 72 5 1.6 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). PCB Mountb SYMBOL RthJA RthJF LIMIT 90 30 UNIT °C/W S12-2200-Rev. D, 24-Sep-12 1 Document Number: 65674 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE...