SQ4435EY

www.vishay.com SQ4435EY Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration SO-8 - 30 0.018 0.031 - 15 Single S FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 Top View 8D 7D 6D 5D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4435EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 - 15 - 8.7 - 6.2 - 60 - 25 31 6.8 2.3 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 85 22 UNIT °C/W S11-2109 Rev. B, 31-Oct-11 1 Document Number: 67932 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE ...