SQ4483EY

www.vishay.com SQ4483EY Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration Package -30 0.0085 0.0200 -22 Single SO-8 FEATURES TrenchFET® power MOSFET AEC-Q101 qualified c 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Single D D5 D6 D7 8 S G 4 3G 2S 1S S Top View P-Channel D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -30 ± 20 -30 -30 -30 -84 -32 51 7 2 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PCB Mount b SYMBOL RthJA RthJF LIMIT 85 21 UNIT V A mJ W °C UNIT °C/W S15-1806-Rev. A, 10-Aug-15 1 Document Number: 74794 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS D...