DatasheetsPDF.com

KF3N40D Dataheets PDF



Part Number KF3N40D
Manufacturers KEC
Logo KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF3N40D DatasheetKF3N40D Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS D.

  KF3N40D   KF3N40D



Document
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current @TC=25 @TC=100 ID Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP EAS EAR dv/dt Drain Power Dissipation TC=25 Derate above25 PD Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 400 30 2.2 1.4 6* 52 3 4.5 40 0.32 150 -55 150 3.1 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W KF3N40D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF3N40D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF3N40I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H J K L M N P MILLIMETERS 6.6 +_ 0.2 6.1 +_ 0.2 5.34 +_0.3 0.7 +_ 0.2 9.3 +_0.3 2.3+_ 0.2 0.76 +_ 0.1 2.3 +_ 0.1 0.5+_ 0.1 1.8 +_ 0.2 0.5 +_ 0.1 1.0 +_ 0.1 0.96 MAX 1.02 +_ 0.3 PIN CONNECTION D IPAK(1) G S 2010. 8. 23 Revision No : 0 1/6 KF3N40D/I ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=400V, VGS=0V, Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=1.1A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=320V, ID=2.2A VGS=10V (Note4,5) VDD=200V, ID=2.2A RG=25 VGS=10V (Note4,5) VDS=25V, VGS=0V, f=1.0MHz Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS


A210E KF3N40D KF3N40I


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)