SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies.
FEATURES VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
@TC=25 @TC=100
ID
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR dv/dt
Drain Power Dissipation
TC=25 Derate above25
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 400 30 2.2 1.4 6* 52
3
4.5 40 0.32 150 -55 150
3.1 110
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
KF3N40D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N40D
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
123
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
KF3N40I
AH CJ
BD
M N
G FF
123
K
E
P
L
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H J K L M N P
MILLIMETERS 6.6 +_ 0.2 6.1 +_ 0.2 5.34 +_0.3 0.7 +_ 0.2 9.3 +_0.3 2.3+_ 0.2 0.76 +_ 0.1 2.3 +_ 0.1 0.5+_ 0.1 1.8 +_ 0.2 0.5 +_ 0.1 1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
D
IPAK(1)
G S
2010. 8. 23
Revision No : 0
1/6
KF3N40D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=400V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.1A
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=320V, ID=2.2A
VGS=10V
(Note4,5)
VDD=200V, ID=2.2A RG=25 VGS=10V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
IS VGS