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EFFECT TRANSISTOR. KF3N40I Datasheet

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EFFECT TRANSISTOR. KF3N40I Datasheet






KF3N40I TRANSISTOR. Datasheet pdf. Equivalent




KF3N40I TRANSISTOR. Datasheet pdf. Equivalent





Part

KF3N40I

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA General De scription This planar stripe MOSFET has better characteristics, such as fast s witching time, low on resistance, low g ate charge and excellent avalanche char acteristics. It is mainly suitable for LED Lighting and switching mode power s upplies. FEATURES VDSS(Min.)= 400V, ID = 2.2A Drain-Source ON Resistance : RDS (ON)=3.4 Qg(typ.) .
Manufacture

KEC

Datasheet
Download KF3N40I Datasheet


KEC KF3N40I

KF3N40I; =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain -Source Voltage VDSS Gate-Source Volt age VGSS Drain Current @TC=25 @TC=10 0 ID Pulsed (Note1) Single Pulsed Ava lanche Energy (Note 2) Repetitive Avala nche Energy (Note 1) Peak Diode Recover y dv/dt (Note 3) IDP EAS EAR dv/dt Dr ain Power Dissipation TC=25 Derate abo ve25 PD Maximum .


KEC KF3N40I

Junction Temperature Tj Storage Temper ature Range Tstg Thermal Characterist ics Thermal Resistance, Junction-to-Ca se Thermal Resistance, Junction-toAmbie nt RthJC RthJA RATING 400 30 2.2 1.4 6* 52 3 4.5 40 0.32 150 -55 150 3.1 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W KF3N40D/I N CHANNEL M OS FIELD EFFECT TR.


KEC KF3N40I

ANSISTOR KF3N40D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0 .96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOUR CE DPAK (1) KF3N40I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. S OURCE DIM A B C D.

Part

KF3N40I

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA General De scription This planar stripe MOSFET has better characteristics, such as fast s witching time, low on resistance, low g ate charge and excellent avalanche char acteristics. It is mainly suitable for LED Lighting and switching mode power s upplies. FEATURES VDSS(Min.)= 400V, ID = 2.2A Drain-Source ON Resistance : RDS (ON)=3.4 Qg(typ.) .
Manufacture

KEC

Datasheet
Download KF3N40I Datasheet




 KF3N40I
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 2.2A
Drain-Source ON Resistance : RDS(ON)=3.4
Qg(typ.) =4.4nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
@TC=25
@TC=100
ID
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
TC=25
Derate above25
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
400
30
2.2
1.4
6*
52
3
4.5
40
0.32
150
-55 150
3.1
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF3N40D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF3N40D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF3N40I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
D
IPAK(1)
G
S
2010. 8. 23
Revision No : 0
1/6




 KF3N40I
KF3N40D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=400V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.1A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=320V, ID=2.2A
VGS=10V
(Note4,5)
VDD=200V, ID=2.2A
RG=25
VGS=10V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=2.2A, VGS=0V
trr IS=2.2A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 2A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
400 - - V
- 0.4 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 2.8 3.4
- 4.4 5.8
- 1.0 - nC
- 2.0 -
- 10 -
- 11 -
ns
- 20 -
- 17 -
- 163 211
- 26 - pF
- 2.5 -
- -2
A
- -8
- - 1.4 V
- 240 -
ns
- 0.65 -
C
Marking
KF3N40
D 001
1 KF3N40
2 I 001
1
2
1 PRODUCT NAME
2 LOT NO
2010. 8. 23
Revision No : 0
2/6




 KF3N40I
KF3N40D/I
2010. 8. 23
Revision No : 0
3/6






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