KF3N80I

SEMICONDUCTOR TECHNICAL DATA KF3N80D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS= 800V, ID= 2.7A Drain-Source ON Resistance : RDS(ON)=4.2 Qg(typ) =12nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 800 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 2.7 1.7 6* 175 4.4 4.5 69.4 0.55 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature. 1.8 110 UNIT V V A mJ mJ V/ns W W/ /W /W KF3N80D A CD B H G FF J E 123 K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O Max 0.1 O DPAK (1) A C M N G FF 123 K E BD KF3N80I H J P L DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 C 5.34 +_0.3 D 0.7+_0.2 E 9.3 +_0.3 F 2.3...