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EFFECT TRANSISTOR. KF3N60D Datasheet

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EFFECT TRANSISTOR. KF3N60D Datasheet






KF3N60D TRANSISTOR. Datasheet pdf. Equivalent




KF3N60D TRANSISTOR. Datasheet pdf. Equivalent





Part

KF3N60D

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for electronic ballast and switc hing mode power supplies. FEATURES VDS S= 600V, ID= 2.3A .
Manufacture

KEC

Datasheet
Download KF3N60D Datasheet


KEC KF3N60D

KF3N60D; Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM R ATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.1 0 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0. 10 N 0.70 MIN 123.


KEC KF3N60D

1. GATE 2. DRAIN 3. SOURCE Drain-Sour ce Voltage VDSS 600 Gate-Source Volt age VGSS 30 @TC=25 Drain Current @TC =100 Pulsed (Note1) Single Pulsed Avala nche Energy (Note 2) Repetitive Avalanc he Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2 .3 1.46 7* 120 3.2 4.5 Drain Power Dis sipation Tc=25 Derate above 25 PD 73 0.58 Maximum Jun.


KEC KF3N60D

ction Temperature Tj 150 Storage Temp erature Range Tstg -55 150 Thermal Ch aracteristics Thermal Resistance, Junc tion-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain c urrent limited by maximum junction temp erature. 2.8 62.5 V V A mJ mJ V/ns W W/ /W /W A C M N G FF 123 K E BD D PAK (1) KF3N60I H J P L DIM MILLIMET ERS A 6.6+_0.2 B 6.

Part

KF3N60D

Description

N-CHANNEL MOS FIELD EFFECT TRANSISTOR



Feature


SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, suc h as fast switching time, low on resist ance, low gate charge and excellent ava lanche characteristics. It is mainly su itable for electronic ballast and switc hing mode power supplies. FEATURES VDS S= 600V, ID= 2.3A .
Manufacture

KEC

Datasheet
Download KF3N60D Datasheet




 KF3N60D
SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 2.3A
Drain-Source ON Resistance : RDS(ON)=3.3
Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF3N60D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
2.3
1.46
7*
120
3.2
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
73
0.58
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
2.8
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
C
M
N
G
FF
123
DPAK (1)
KF3N60I
H
J
P
L
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
S
2010. 12. 20
Revision No : 0
1/6




 KF3N60D
KF3N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.15A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=3A
VGS=10V
(Note4,5)
VDD=300V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
IS
VGS<Vth
ISP
VSD IS=2.3A, VGS=0V
trr IS=3A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
11
KF3N60
KF3N60
D 001
2
I 001
2
1 PRODUCT NAME
2 LOT NO
MIN. TYP. MAX. UNIT
600 - - V
- 0.61 - V/
- - 10
2.5 - 4.5 V
- - 100 nA
- 2.8 3.3
- 8.5 -
- 1.8 -
- 3.6 -
- 25 -
- 25 -
- 40 -
- 20 -
- 355 -
- 45 -
- 4.4 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
ns
- 1.5 -
C
2010. 12. 20
Revision No : 0
2/6




 KF3N60D
KF3N60D/I
Fig1. ID - VDS
101 VGS=10V
VGS=7V
100 VGS=5V
10-1
10-2
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
TC=100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2010. 12. 20
Revision No : 0
VDS=30V
101
Fig2. ID - VGS
TC=100 C
100 25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
6.0
5.0
VGS=6V
4.0
VGS=10V
3.0
2.0
1.0
0
01 23 45 6
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS =10V
2.5 IDS = 1.15A
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
3/6






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