KF3N60D

SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOURCE Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2.3 1.46 7* 120 3.2 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 73 0.58 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature. 2.8 62.5 V V A mJ mJ V/ns W W/ /W /W A C M N G FF 123 K E BD DPAK (1) KF3N60I H J P L DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 C 5.34 +_0.3...