SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe...
SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS) trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-toAmbient
RthJA
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
RATING 500 30 3* 1.8* 9* 110
4
10 25 0.2 150 -55 150
5.0 62.5
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
AC
F O
K
E
LM D
NN 123
G B
J
R H
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 ...