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MOS FET. RJK0822SPN Datasheet

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MOS FET. RJK0822SPN Datasheet






RJK0822SPN FET. Datasheet pdf. Equivalent




RJK0822SPN FET. Datasheet pdf. Equivalent





Part

RJK0822SPN

Description

Silicon N Channel Power MOS FET



Feature


RJK0822SPN Silicon N Channel Power MOS F ET Power Switching Features • Low on -resistance RDS(on) = 7.9mΩ typ.(at V GS = 10V) • High speed switching • Low drive current • Suitable for moto r drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 Se ptember.26.2007 Note: This product is designed for Electric Bike (E-Bike) app lication in China market. R.
Manufacture

Renesas

Datasheet
Download RJK0822SPN Datasheet


Renesas RJK0822SPN

RJK0822SPN; ev.1.00, September.26.2007, page 1 of 7 RJK0822SPN Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to so urce voltage VDSS Gate to source volt age Drain current Drain peak current Bo dy-drain diode reverse drain current Ch annel dissipation VGSS ID ID(pulse)Not e1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty.


Renesas RJK0822SPN

cycle ≤ 1% 2. Tc = 25°C Ratings 80 ±20 80 320 80 100 150 –55 to +150 U nit V V A A A W °C °C Rev.1.00, Sept ember.26.2007, page 2 of 7 RJK0822SPN Electrical Characteristics (Ta = 25° C) Item Symbol Min Drain to source b reakdown voltage V(BR)DSS 80 Gate to s ource leak current Zero gate voltage dr ain current Gate to source cutoff volta ge Static drain to source o.


Renesas RJK0822SPN

n state resistance IGSS IDSS VGS(off) R DS(on) — — 2 — Forward transfer admittance Input capacitance |yfs| Ci ss 53 — Output capacitance Coss Reverse transfer capacitance Crss Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode.

Part

RJK0822SPN

Description

Silicon N Channel Power MOS FET



Feature


RJK0822SPN Silicon N Channel Power MOS F ET Power Switching Features • Low on -resistance RDS(on) = 7.9mΩ typ.(at V GS = 10V) • High speed switching • Low drive current • Suitable for moto r drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 Se ptember.26.2007 Note: This product is designed for Electric Bike (E-Bike) app lication in China market. R.
Manufacture

Renesas

Datasheet
Download RJK0822SPN Datasheet




 RJK0822SPN
RJK0822SPN
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 7.9mtyp.(at VGS = 10V)
High speed switching
Low drive current
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
Rev.1.00
September.26.2007
Note: This product is designed for Electric Bike (E-Bike) application in China market.
Rev.1.00, September.26.2007, page 1 of 7




 RJK0822SPN
RJK0822SPN
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
Ratings
80
±20
80
320
80
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00, September.26.2007, page 2 of 7




 RJK0822SPN
RJK0822SPN
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 80
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
IDSS
VGS(off)
RDS(on)
2
Forward transfer admittance
Input capacitance
|yfs|
Ciss
53
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate Resistance
Rg —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
0.78
Notes: 4. Pulse test
Typ Max Unit
——V
— ± 0.5 µA
—1
µA
—4
V
7.9 9.8 m
129
3880
540
260
1.8
63
17
16
40
244
100
20
40
1.12
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 250uA
ID = 40 A, VGS = 10 V Note4
ID = 40 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 40 V
VGS = 10 V
ID = 80 A
VGS = 10 V, ID = 40 A
VDD 40 V
RL = 1.0
Rg = 10
IF = 80 A, VGS = 0 Note4
IF = 25 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.1.00, September.26.2007, page 3 of 7






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