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Mode MOSFET. HY1001M Datasheet

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Mode MOSFET. HY1001M Datasheet






HY1001M MOSFET. Datasheet pdf. Equivalent




HY1001M MOSFET. Datasheet pdf. Equivalent





Part

HY1001M

Description

N-Channel Enhancement Mode MOSFET



Feature


HY1001M/P N-Channel Enhancement Mode MO SFET Features • 70V/75A, RDS(ON)=7.8 mΩ (typ.) @ VGS=10V • Avalanche Rat ed • Reliable and Rugged • Lead Fre e and Green Devices Available (RoHS Com pliant) Applications • Power Manageme nt for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Inf ormation S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO.
Manufacture

HOOYI

Datasheet
Download HY1001M Datasheet


HOOYI HY1001M

HY1001M; 220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead -free products contain molding compound s/die attach materials and 100% matte t in plate termination finish; which are fully compliant with RoHS. HOOYI lead- free products meet or exceed the lead-f ree requirements of IPC/JEDEC J-STD-02 0C for MSL classification at lead-free peak reflow temper.


HOOYI HY1001M

ature. HOOYI defines “Green” to mea n lead-free (RoHS compliant) and haloge n free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 150 0ppm by weight). HOOYI reserves the ri ght to make changes to improve reliabil ity or manufacturability without notice , and advise customers to obtain the la test version of releva.


HOOYI HY1001M

nt information to verify before placing orders. 1 www.hooyi-semi.com HY1001M/P Absolute Maximum Ratings Symbol Par ameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Vo ltage VGSS Gate-Source Voltage TJ Maxim um Junction Temperature TSTG Storage Te mperature Range IS Diode Continuous For ward Current Mounted on Large Heat Sink TC=25°C IDP 300µ.

Part

HY1001M

Description

N-Channel Enhancement Mode MOSFET



Feature


HY1001M/P N-Channel Enhancement Mode MO SFET Features • 70V/75A, RDS(ON)=7.8 mΩ (typ.) @ VGS=10V • Avalanche Rat ed • Reliable and Rugged • Lead Fre e and Green Devices Available (RoHS Com pliant) Applications • Power Manageme nt for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Inf ormation S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO.
Manufacture

HOOYI

Datasheet
Download HY1001M Datasheet




 HY1001M
HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
70V/75A,
RDS(ON)=7.8m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management for Inverter Systems.
S
D
G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com




 HY1001M
HY1001M/P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
EAS Avalanche Energy, Single Pulsed
L=0.3mH,VD=50V
Rating
70
25
175
-55 to 175
75
290
75
70
105
75
0.5
62.5
580
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS=0V, IDS=250µA
VDS=75V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±25V, VDS=0V
VGS=10V, IDS=40A
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
Min.
70
-
-
2
-
-
-
-
-
HY1001M/P
Typ. Max.
--
-1
- 10
34
- ±100
7.8 9
0.8 1
100 -
380 -
Unit
V
µA
V
nA
m
V
ns
nC
2 www.hooyi-semi.com




 HY1001M
HY1001M/P
Electrical Characteristics (Cont.)
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=40A
Note a : Pulse test ; pulse width300µs, duty cycle2%.
Note b : Guaranteed by design, not subject to production testing.
HY1001M/P
Min. Typ. Max.
- 0.82 -
- 3150 -
- 300
-
- 240 -
- 18.2 -
- 15.6 -
- 70.5 -
- 13.8 -
- 83 -
- 8.9 -
- 24.3 -
Unit
pF
ns
nC
3 www.hooyi-semi.com






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