ST KSB564
PNP Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications.
The transistor is subdiv...
ST KSB564
PNP Silicon Epitaxial Planar
Transistor Audio Frequency Power amplifier applications.
The
transistor is subdivided into three group, O, Y and G according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25℃)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO
-IC Ptot Tj TS
Value 30 25 5 800 625 150
-55 to +150
Unit V V V mA
mW OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST KSB564
Characteristics at Tamb=25 OC
Symbol
DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y G
hFE hFE hFE
Collector Emitter Breakdown Voltage at -IC=10mA
Collector Base Breakdown Voltage at -IC=100μA
Emitter Base Breakdown Voltage at -IE=100μA
Collector Cutoff Current at -VCB=30V
Collector Saturation Voltage at -IC=500mA, -IB=50mA
Base Saturation Voltage at -IC=500mA, -IB=50mA
Collector Output Capacitance at -VCB=6V, f=1MHz
Transition Frequency at -VCE=6V, -IC=10mA
-V(BR)CEO -V(BR)CBO -V(BR)EBO
-ICBO -VCE(sat) -VBE(sat)
COB fT
Min.
70 120 200 25 30
5 -
Typ.
18 110
Max.
140 240 400
0.1 0.5 1.2 -
Unit
V V V μA V V pF MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech Internat...