KSB564

ST KSB564 PNP Silicon Epitaxial Planar Transistor Audio Frequency Power amplifier applications. The transistor is subdivided into three group, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25℃) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 25 5 800 625 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST KSB564 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y G hFE hFE hFE Collector Emitter Breakdown Voltage at -IC=10mA Collector Base Breakdown Voltage at -IC=100μA Emitter Base Breakdown Voltage at -IE=100μA Collector Cutoff Current at -VCB=30V Collector Saturation Voltage at -IC=500mA, -IB=50mA Base Saturation Voltage at -IC=500mA, -IB=50mA Collector Output Capacitance at -VCB=6V, f=1MHz Transition Frequency at -VCE=6V, -IC=10mA -V(BR)CEO -V(BR)CBO -V(BR)EBO -ICBO -VCE(sat) -VBE(sat) COB fT Min. 70 120 200 25 30 5 - Typ. 18 110 Max. 140 240 400 0.1 0.5 1.2 - Unit V V V μA V V pF MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Internat...