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Planar Transistor. KSB564 Datasheet

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Planar Transistor. KSB564 Datasheet






KSB564 Transistor. Datasheet pdf. Equivalent




KSB564 Transistor. Datasheet pdf. Equivalent





Part

KSB564

Description

PNP Silicon Epitaxial Planar Transistor



Feature


ST KSB564 PNP Silicon Epitaxial Planar T ransistor Audio Frequency Power amplifi er applications. The transistor is subd ivided into three group, O, Y and G acc ording to its DC current gain. On speci al request, these transistors can be ma nufactured in different pin configurati ons. TO-92 Plastic Package Weight appr ox. 0.19g Absolute Maximum Ratings (Ta =25℃) Collector Ba.
Manufacture

SEMTECH

Datasheet
Download KSB564 Datasheet


SEMTECH KSB564

KSB564; se Voltage Collector Emitter Voltage Emi tter Base Voltage Collector Current Pow er Dissipation Junction Temperature Sto rage Temperature Range Symbol -VCBO -V CEO -VEBO -IC Ptot Tj TS Value 30 25 5 800 625 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Su bsidiary of Sino-Tech International Hol dings Limited, a company listed on the Hong Kong Stock Ex.


SEMTECH KSB564

change, Stock Code: 724) ® Dated : 07/ 12/2002 ST KSB564 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y G hFE hFE hFE Collector Emitter Br eakdown Voltage at -IC=10mA Collector B ase Breakdown Voltage at -IC=100μA Emi tter Base Breakdown Voltage at -IE=100 A Collector Cutoff Current at -VCB=30V Collector Saturation.


SEMTECH KSB564

Voltage at -IC=500mA, -IB=50mA Base Sat uration Voltage at -IC=500mA, -IB=50mA Collector Output Capacitance at -VCB=6V , f=1MHz Transition Frequency at -VCE=6 V, -IC=10mA -V(BR)CEO -V(BR)CBO -V(BR) EBO -ICBO -VCE(sat) -VBE(sat) COB fT M in. 70 120 200 25 30 5 - Typ. 18 110 Max. 140 240 400 0.1 0.5 1.2 - Unit V V V μA V V pF MHz SEMTECH ELECTRONICS LTD. (Subsidiary o.

Part

KSB564

Description

PNP Silicon Epitaxial Planar Transistor



Feature


ST KSB564 PNP Silicon Epitaxial Planar T ransistor Audio Frequency Power amplifi er applications. The transistor is subd ivided into three group, O, Y and G acc ording to its DC current gain. On speci al request, these transistors can be ma nufactured in different pin configurati ons. TO-92 Plastic Package Weight appr ox. 0.19g Absolute Maximum Ratings (Ta =25℃) Collector Ba.
Manufacture

SEMTECH

Datasheet
Download KSB564 Datasheet




 KSB564
ST KSB564
PNP Silicon Epitaxial Planar Transistor
Audio Frequency Power amplifier applications.
The transistor is subdivided into three group, O, Y and
G according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
Value
30
25
5
800
625
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002




 KSB564
ST KSB564
Characteristics at Tamb=25 OC
Symbol
DC Current Gain
at -VCE=1V, -IC=100mA
Current Gain Group O
Y
G
hFE
hFE
hFE
Collector Emitter Breakdown Voltage
at -IC=10mA
Collector Base Breakdown Voltage
at -IC=100μA
Emitter Base Breakdown Voltage
at -IE=100μA
Collector Cutoff Current
at -VCB=30V
Collector Saturation Voltage
at -IC=500mA, -IB=50mA
Base Saturation Voltage
at -IC=500mA, -IB=50mA
Collector Output Capacitance
at -VCB=6V, f=1MHz
Transition Frequency
at -VCE=6V, -IC=10mA
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
-ICBO
-VCE(sat)
-VBE(sat)
COB
fT
Min.
70
120
200
25
30
5
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
18
110
Max.
140
240
400
-
-
-
0.1
0.5
1.2
-
-
Unit
-
-
-
V
V
V
μA
V
V
pF
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002










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