BLM8205B

Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A Typ.RDS(ON) = 16mΩ @ VGS=4.5V Typ.RDS(ON) = 19mΩ @ VGS=2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application ● Battery protection ● Load switch ● Power management Top view Package Marking and Ordering Information Device Marking Device Device Package 8205B BLM8205B SOT23-6 8205B BLM8205B TSSOP-8 Reel Size Ø180mm Ø330mm Tape width 8mm 12mm Quantity 3000 units 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 6 25 1.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,...