CSD471A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD471A TO-92 BCE ECB Low Frequency Power Amplifier. Complementary CSB564A ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL VALUE Collector -Base Voltage BVCBO 40 Collector Emitter Voltage BVCEO 30 Emitter Base Voltage BVEBO 5.0 Collector Current IC 1.0 Collector Dissipation PC 800 Junction Temperature Tj 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Base Voltage BVCBO IC=100uA, IE=0 40 Collector Emitter Voltage BVCEO IC=10mA, IB=0 30 Emitter Base Voltage BVEBO IE=100uA, IC=0 5.0 Collector Cut off Current ICBO VCB=30V, IE=0 - DC Current Gain hFE VCE=1V, IC=100mA 70 Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.1A - Base Emitter Saturation Voltage VBE(Sat) IC=1A, IB=0.1A - Dynamic Characteristics Transition Frequency ft VCE=6V, IC=10mA, - Output Capacitance Cob VCB=6V, IE=0 - f=1MHz TYP - 130 16 MAX - 0.1 400 0.5 1.2 - hFE* Classification : O : 70-140; Y : 120-240; G : 200-400; UNIT V V V A mW deg C deg C UNIT V V V uA V V MHz pF Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B 321 KA E D AA G D SEC AA 21 3 FF 321 PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER H C All diminsions in mm. DIM MIN. MAX. A 4.32 ...