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RB751V-40

GME

Schottky Barrier Diode

Schottky Barrier Diode FEATURES z High reliability z Low voltage; Low inductance z Low VF Pb Lead-free Production spec...


GME

RB751V-40

File Download Download RB751V-40 Datasheet


Description
Schottky Barrier Diode FEATURES z High reliability z Low voltage; Low inductance z Low VF Pb Lead-free Production specification RB751V-40 APPLICATIONS z Low current rectification. ORDERING INFORMATION Type No. Marking RB751V-40 5 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 40 DC reverse voltage VR 30 Mean rectifying current IO 30 Peak forward surge current IFSM 200 Junction temperature Tj 125 Storage temperature Tstg -40 to+125 Unit V V mA mA ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF 0.37 IR 0.5 CT 2 Unit V μA pF Conditions IF=1mA VR=30v VR=1V,f=1MHz B023 Rev.A www.gmicroelec.com 1 Production specification Schottky Barrier Diode RB751V-40 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified PACKAGE OUTLINE Plastic surface mounted package K A D HE J C B SOD-323 SOD-323 Dim Min Max A 1.60 1.80 B 1.20 1.40 C 0.9 Typical D 0.30 Typical E 0.22 0.42 H 0.02 0.1 J 0.1 Typical K 2.55 2.75 All Dimensions in mm B023 Rev.A www.gmicroelec.com 2 Schottky Barrier Diode SOLDERING FOOTPRINT 0.63 0.83 1.60 2.85 Unit :mm PACKAGE INFORMATION Device Package Shipping RB751V-40 SOD-323 3000/Tape&Reel Production specification RB751V-40 B023 Rev.A www.gmicroelec.com 3 ...




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