RB751V-40

DATA SHEET SEMICONDUCTOR RB751V-40 200mW SOD-323 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units H SOD-323 Flat Lead PD Power Dissipation 200 mW TSTG Storage Temperature Range -55 to +125 °C TJ Operating Junction Temperature +125 °C VRRM Repetitive Peak Reverse Voltage 40 V VR Reverse Voltage 30 V IF Forward Current 30 mA IFSM Non-Repetitive Peak Forward Current 500 mA These ratings are limiting values above which the serviceability of the diode may be impaired. DEVICE MARKING CODES: Specification Features: ƒ Low Forward Voltage Drop ƒ Flat Lead SOD-323 Small Outline Plastic Package ƒ Surface Device Type Mounting ƒ Matte Tin(Sn) Lead Finish ƒ Pb free product at available : 99% Sn above meet RoHS environment ƒ Band Indicates Cathode ƒ ESD Rating: Human Body Model, Class 2. Machine Model, Class C. Device Type RB751V-40 Device Marking B5 Anode ELECTRICAL SYMBOL Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Condition Limits Min Max Unit BV Breakdown Voltage IR=10µA 30 Volts IR Reverse Leakage Current VR=30V 0.5 µA VF Forward Voltage TCBAT42WS, IF=1mA 0.37 Volts http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS RB751V-40 Total Capacitance Forward Voltage vs Ambient Temperature http://www.yeashin.com 2 REV.02 20120305 PACKAGE OUTLINE & DIMENSIONS RB751V-40 R...