SQD100N03-3M4

www.vishay.com SQD100N03-3m4 Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration TO-252 30 0.0034 100 Single FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested AEC-Q101 Qualifiedd Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D GD Drain Connected to Tab S Top View G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD100N03-3m4-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 30 ± 20 100 87 100 160 58 168 136 45 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 50 1.1 UNIT V A mJ W °C UNIT °C/W S12-2906-Rev. A, 10-Dec-12 1 Document Number: 62549 For technical questions, contact: [email protected] THIS DOCUMENT IS SUB...