SQJ422EP

www.vishay.com SQJ422EP Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package D 1 2S 3S 4S G Bottom View 40 0.0034 0.0043 75 Single PowerPAK SO-8L FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK® SO-8L SQJ422EP (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) c TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 75 62 75 300 46 105 83 27 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL RthJA RthJC LIMIT 65 1.8 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c....