SQJ910AEP

www.vishay.com SQJ910AEP Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration PowerPAK® SO-8L Dual 30 0.007 0.0086 30 Dual 6.15 mm D 2 4 G2 3 S2 2 G1 1 S1 Bottom View D 1 5.13 mm FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested AEC-Q101 Qualifiedd Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ910AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg LIMIT 30 ± 20 30 30 30 120 29 42 48 16 - 55 to + 175 260 UNIT V A mJ W °C THERMAL RESISIANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 85 °C/W RthJC 3.1 Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 materi...