Automotive Dual N-Channel MOSFET
www.vishay.com
SQJ968EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
Description
www.vishay.com
SQJ968EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration Package
60 0.0336 0.0444
23.5 Dual PowerPAK SO-8L
FEATURES TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® SO-8L Dual
D1
D2
6.15 mm
1 Top View
5.13 mm
D1
D2
1 2 S1 3 G1 4 S2 G2
Bottom View
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a Continuous Source Current (Diode Conduction) a
TC = 25 °C TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 23.5 13.5 23 72 9 4 42 14
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 85 3.5
UNIT °C/W
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The Power...
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