Automotive Dual N-Channel MOSFET
www.vishay.com
SQJ992EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
Description
www.vishay.com
SQJ992EP
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration
Package
60 0.0562 0.0745
8 Dual PowerPAK SO-8L
PowerPAK® SO-8L Dual
FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D1 D2
6.15 mm
1 Top View
5.13 mm
D1
D2
1 2 S1 3 G1 4 S2 G2
Bottom View
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TC = 125 °C
L = 0.1 mH
ID
IS IDM IAS EAS
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 125 °C
PD TJ, Tstg
LIMIT 60 ± 20 15 10.5 8 60 16 12 34 11
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 85 4.3
UNIT °C/W
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is...
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