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SQJQ402E
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
PowerPAK® 8x8L Single 1.9 mm
D
40 0.0017 0.0020
200 Single
8.1 mm
FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Thin 1.9 mm height • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
D
8 mm
G
1 G
2 S
S3
Top View
4 S
4 S
S3
2 S
Bottom View
1 G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK 8x8L SQJQ402E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current
TC = 25 °C a TC = 125 °C
VGS ID
Continuous Source Current (Diode Conduction) Pulsed Drain Current b
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipation
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT 40 ± 20 200 127 200 300 85 361 150 50
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
RthJA
50
°C/W
RthJC
1
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8x8L is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-2246-Rev. A, 10-Nov-14
1
Document Number: 62748
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQJQ402E
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b Dynamic b
VDS VGS(th) IGSS IDSS ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS ≥ 5 V
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 10 A
VGS = 10 V
ID = 20 A, TJ = 125 °C
VGS = 10 V
ID = 20 A, TJ = 175 °C
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c
Crss Qg Qgs Qgd
Gate Resistance
Rg
Turn-On Delay Time c
td(on)
Rise Time c
tr
Turn-Off Delay Time c
td(off)
Fall Time c
tf
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
VGS = 0 V
VDS = 20 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 40 A
f = 1 MHz
VDD = 20 V, RL = 0.5 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
MIN.
40 1.5
100 -
0.6 -
-
TYP. MAX. UNIT
2 0.0013 0.0015 140
2.5 ± 100 1 50 150
0.0017 0.0020 0.0026 0.0031
-
V nA μA A
Ω
S
10 760 1370 650 169
32 29 1.3 19 15 69 11
13 500 1800 850 260
2.5 30 25 110 20
pF
nC Ω ns
- 300 A 0.82 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S14-2246-Rev. A, 10-Nov-14
2
Document Number: 62748
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
250 VGS = 10 V thru 4 V
200
16 000 12 800
150 9600
SQJQ402E
Vishay Siliconix
Ciss
C - Capacitance (pF)
ID - Drain Current (A)
100 50 0 0
160
VGS = 3 V
3 6 9 12 VDS - Drain-to-Source Voltage (V)
Output Characteristics
15
6400
3200
0 Crss 0
Coss
8 16 24 32 VDS - Drain-to-Source Voltage (V)
Capacitance
10
.