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SQJQ402E Dataheets PDF



Part Number SQJQ402E
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQJQ402E DatasheetSQJQ402E Datasheet (PDF)

www.vishay.com SQJQ402E Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration PowerPAK® 8x8L Single 1.9 mm D 40 0.0017 0.0020 200 Single 8.1 mm FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D D 8 mm G 1 G 2 S S3 Top View 4 S 4 S .

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www.vishay.com SQJQ402E Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration PowerPAK® 8x8L Single 1.9 mm D 40 0.0017 0.0020 200 Single 8.1 mm FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Thin 1.9 mm height • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D D 8 mm G 1 G 2 S S3 Top View 4 S 4 S S3 2 S Bottom View 1 G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK 8x8L SQJQ402E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °C a TC = 125 °C VGS ID Continuous Source Current (Diode Conduction) Pulsed Drain Current b IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg LIMIT 40 ± 20 200 127 200 300 85 361 150 50 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 50 °C/W RthJC 1 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square Pcb (Fr4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8x8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S14-2246-Rev. A, 10-Nov-14 1 Document Number: 62748 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQJQ402E Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 40 V VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C VGS = 10 V VDS ≥ 5 V VGS = 10 V ID = 20 A VGS = 4.5 V ID = 10 A VGS = 10 V ID = 20 A, TJ = 125 °C VGS = 10 V ID = 20 A, TJ = 175 °C VDS = 15 V, ID = 20 A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Crss Qg Qgs Qgd Gate Resistance Rg Turn-On Delay Time c td(on) Rise Time c tr Turn-Off Delay Time c td(off) Fall Time c tf Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 40 A f = 1 MHz VDD = 20 V, RL = 0.5 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. MIN. 40 1.5 100 - 0.6 - - TYP. MAX. UNIT 2 0.0013 0.0015 140 2.5 ± 100 1 50 150 0.0017 0.0020 0.0026 0.0031 - V nA μA A Ω S 10 760 1370 650 169 32 29 1.3 19 15 69 11 13 500 1800 850 260 2.5 30 25 110 20 pF nC Ω ns - 300 A 0.82 1.2 V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2246-Rev. A, 10-Nov-14 2 Document Number: 62748 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 250 VGS = 10 V thru 4 V 200 16 000 12 800 150 9600 SQJQ402E Vishay Siliconix Ciss C - Capacitance (pF) ID - Drain Current (A) 100 50 0 0 160 VGS = 3 V 3 6 9 12 VDS - Drain-to-Source Voltage (V) Output Characteristics 15 6400 3200 0 Crss 0 Coss 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance 10 .


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