Automotive N-Channel MOSFET
www.vishay.com
SQM25N15-52
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RD...
Description
www.vishay.com
SQM25N15-52
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
TO-263
150 0.052
25 Single TO-263
D
FEATURES TrenchFET® power MOSFET
Package with low thermal resistance
100 % Rg and UIS tested AEC-Q101 qualified d
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
G
Top View
S D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b
TC = 25 °C TC = 125 °C
ID
IS IDM
Single Pulse Avalanche Energy Single Pulse Avalanche Current
L = 0.1 mH
IAS EAS
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 150 ± 20 25 16 50 65 30 45 107 35
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 40 1.4
UNIT V
A
mJ W °C
UNIT °C/W
S15-1819-Rev. D, 10-Aug-15
1
Document Number: 72148
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRI...
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