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SQM40N15-38 Dataheets PDF



Part Number SQM40N15-38
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQM40N15-38 DatasheetSQM40N15-38 Datasheet (PDF)

www.vishay.com SQM40N15-38 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration TO-263 150 0.038 0.040 40 Single D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC G G DS Top View ORDERING INFORMATION Package Lead (Pb)-.

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www.vishay.com SQM40N15-38 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration TO-263 150 0.038 0.040 40 Single D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC G G DS Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-263 SQM40N15-38-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 40 23 100 80 40 80 166 55 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 40 0.9 UNIT V A mJ W °C UNIT °C/W S11-2035-Rev. C, 17-Oct-11 1 Document Number: 65269 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SQM40N15-38 Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 150 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VGS = 0 V VGS = 0 V VGS = 10 V VDS = 150 V, TJ = 125 °C VDS = 150 V, TJ = 175 °C VDS5 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 10 V ID = 15 A ID = 15 A, TJ = 125 °C ID = 15 A, TJ = 175 °C Forward Transconductanceb Dynamicb VGS = 6 V ID = 10 A gfs VDS = 15 V, ID = 15 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec td(on) Rise Timec tr Turn-Off Delay Timec td(off) Fall Timec tf Source-Drain Diode Ratings and Characteristicsb VGS = 10 V VDS = 75 V, ID = 85 A f = 1 MHz VDD = 75 V, RL = 0.88  ID  85 A, VGEN = 10 V, Rg = 1  Pulsed Currenta ISM Forward Voltage VSD IF = 85 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. MIN. 150 2.5 50 - 1 - - TYP. MAX. UNIT 3.0 0.027 0.030 40 3.5 ± 100 1.0 50 250 0.038 0.078 0.105 0.040 - V nA μA A  S 2710 310 130 46 20 11 2 14 17 24 9 3390 390 165 70 3 21 26 36 14 pF nC  ns - 80 0.95 1.5 A V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2035-Rev. C, 17-Oct-11 2 Document Number: 65269 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 VGS = 10 V thru 6 V 64 80 64 SQM40N15-38 Vishay Siliconix ID - Drain Current (A) ID - Drain Current (A) 48 48 32 16 0 0 100 VGS = 5 V VGS = 4 V 3 6 9 12 VDS - Drain-to-Source Voltage (V) Output Characteristics 15 32 16 0 0 0.10 TC = 25 °C TC = 125 °C TC = - 55 °C 2468 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 g fs - Transconductance (S) 80 TC = - 55 °C 60 TC = 25 °C 40 TC = 125 °C 20 RDS(on) - On-Resistance (Ω) 0.08 0.06 0.04 0.02 VGS = 6 V VGS = 10 V 0 0 5000 4000 3000 2000 12 24 36 48 ID - Drain Current (A) Transconductance 60 Ciss 0 0 16 32 48 64 80 ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 85 A 8 6 VDS = 75 V 4 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 1000 Crss Coss 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance 100 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge S11-2035-Rev. C, 17-Oct-11 3 Document Number: 65269 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCR.


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