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SQM40N15-38
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration
TO-263
150 0.038 0.040
40 Single
D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
G
G DS Top View
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel MOSFET
TO-263 SQM40N15-38-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
TC = 25 °C TC = 125 °C
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 150 ± 20 40 23 100 80 40 80 166 55
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 40 0.9
UNIT V
A
mJ W °C
UNIT °C/W
S11-2035-Rev. C, 17-Oct-11
1
Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SQM40N15-38
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
Gate-Source Threshold Voltage Gate-Source Leakage
VGS(th) IGSS
VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 150 V
Zero Gate Voltage Drain Current On-State Drain Currenta
IDSS ID(on)
VGS = 0 V VGS = 0 V VGS = 10 V
VDS = 150 V, TJ = 125 °C VDS = 150 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V VGS = 10 V VGS = 10 V
ID = 15 A ID = 15 A, TJ = 125 °C ID = 15 A, TJ = 175 °C
Forward Transconductanceb Dynamicb
VGS = 6 V
ID = 10 A
gfs VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 10 V
VDS = 75 V, ID = 85 A
f = 1 MHz
VDD = 75 V, RL = 0.88 ID 85 A, VGEN = 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = 85 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
MIN.
150 2.5
50 -
1 -
-
TYP. MAX. UNIT
3.0
0.027 0.030 40
3.5 ± 100 1.0 50 250
0.038 0.078 0.105 0.040
-
V nA μA A
S
2710 310 130 46 20 11
2 14 17 24 9
3390 390 165 70
3 21 26 36 14
pF
nC ns
- 80 0.95 1.5
A V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S11-2035-Rev. C, 17-Oct-11
2
Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80 VGS = 10 V thru 6 V
64
80 64
SQM40N15-38
Vishay Siliconix
ID - Drain Current (A)
ID - Drain Current (A)
48 48
32 16
0 0
100
VGS = 5 V
VGS = 4 V
3 6 9 12 VDS - Drain-to-Source Voltage (V)
Output Characteristics
15
32 16
0 0
0.10
TC = 25 °C
TC = 125 °C
TC = - 55 °C
2468 VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
g fs - Transconductance (S)
80
TC = - 55 °C 60
TC = 25 °C 40
TC = 125 °C 20
RDS(on) - On-Resistance (Ω)
0.08 0.06 0.04 0.02
VGS = 6 V VGS = 10 V
0 0
5000 4000 3000 2000
12 24 36 48 ID - Drain Current (A)
Transconductance
60
Ciss
0 0 16 32 48 64 80 ID - Drain Current (A)
On-Resistance vs. Drain Current
10 ID = 85 A
8
6
VDS = 75 V
4
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
1000
Crss Coss
0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V)
Capacitance
100
2
0 0 10 20 30 40 50 Qg - Total Gate Charge (nC)
Gate Charge
S11-2035-Rev. C, 17-Oct-11
3
Document Number: 65269
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCR.