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nb10hsa08

Nihon Inter Electronics

Diode

10A Avg. 80Volts NB10HSA08 Schottky Barrier Diode DSE-13051(1/2) :ショットキーバリアダイオード(SBD) Construction : Schottky Barrier...


Nihon Inter Electronics

nb10hsa08

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10A Avg. 80Volts NB10HSA08 Schottky Barrier Diode DSE-13051(1/2) :ショットキーバリアダイオード(SBD) Construction : Schottky Barrier Diode : Application : High-Frequency Rectification SMD Tj=150℃ Feature Small SMD Lower Thermal-Resistance High Current Capability Tj=150℃ OUTLINE DRAWING Package : NB Dimension : mm ■ Weight : 0.06g(typ.) ■ Flammability : Epoxy Resin=UL94V-0 Recognized ■ (き Ta=25℃) Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated) Item Symbol Conditions Rating くりしピーク Repetitive Peak Reverse Voltage VRRM - 80 Average Rectified Output Current 50Hz Tl=91℃,VRM=40V IO *1 50H Full Sine Wave, (Tl:Lead Temperature) Ta=29℃ *2 Resistive Load VRM=40V 10 3.0 RMS Forward Current IF(RMS) - 11.1 サージ Surge Forward Current 50Hz 1 サイクル りし IFSM 50Hz Full Sine Wave,1 cycle,Non-repetitive 120 Operation Junction Temperature Range Tjw - -40~+150 Storage Temperature Range Tstg - -40~+150 Units V A A A ℃ ℃ ■・ Electrical / Thermal Characteristics Item Symbol Conditions min. ピーク Peak Reverse Current IRM VRM=VRRM,Tj=25℃, Per diode - ピーク Peak Forward Voltage VFM IFM=5.0A,Tj=25℃,Per diode - Junction Capacitance Cj f=100kHz,VR=10V,Per diode Thermal Resistance Rth(j-l) Rth(j-a) ・リード Junction to Lead ・ Junction to Ambient *2(ガラエポ) - *1 : カソードコモンによる/Common Cathode Operation *2 : プリント /Glass-Epoxy Substrate Mounted (Soldering Land=2.0*1.5mm,2.0*3.5mm,Both Sides) typ. - - 135 - - max. 100 0.7 - 7 60 Un...




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