UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B...
UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON
TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
FEATURES
* High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012
1 TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
9013L-x-T92-B
9013G-x-T92-B
TO-92
9013L-x-T92-K
9013G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter B: Base C: Collector
Pin Assignment 123 EBC EBC
Packing
Tape Box Bulk
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-030.C
9013
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector dissipation
PC 625 mW
Junction Temperature
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
DC current gain
Collector-emitter ...