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9013

Unisonic Technologies

NPN Silicon Transistor

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B...


Unisonic Technologies

9013

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UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9013L-x-T92-B 9013G-x-T92-B TO-92 9013L-x-T92-K 9013G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 EBC EBC Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-030.C 9013 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector dissipation PC 625 mW Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter ...




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