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9013 Dataheets PDF



Part Number 9013
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description NPN Silicon Transistor
Datasheet 9013 Datasheet9013 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9013L-x-T92-B 9013G-x-T92-B TO-92 9013L-x-T92-K 9013G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin .

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UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 9013L-x-T92-B 9013G-x-T92-B TO-92 9013L-x-T92-K 9013G-x-T92-K TO-92 Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 EBC EBC Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-030.C 9013 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector dissipation PC 625 mW Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on)  CLASSIFICATION OF hFE1 TEST CONDITIONS IC=-100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=1V, IC=10mA MIN TYP MAX UNIT 40 V 20 V 5V 100 nA 100 nA 64 120 40 120 300 0.16 0.6 V 0.91 1.2 V 0.6 0.67 0.7 V RANK RANGE D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R201-030.C 9013  TYPICAL CHARACTERICS Collector Current, IC (mA) 20 18 16 14 12 10 8 6 4 2 0 0 Static Characteristic IB=140μA IB=120μA IB=100μA IB=80μA IB=60μA IB=40μA IB=20μA 10 20 30 40 50 Collector - Emitter Voltage, VCE (V) NPN EPITAXIAL SILICON TRANSISTOR Dc Current Gain, hFE 1000 500 300 Dc Current Gain VCE=1V 100 50 30 10 5 3 1 1 3 5 10 30 50 100 300 1000 3000 10000 Collector Current, IC (mA) Saturation Voltage, VBE(SAT), VCE(SAT) (mV) 10000 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC=10IB 3000 1000 500 300 VBE (SAT) 100 50 30 VCE (SAT) 10 1 3 10 30 100 300 1000 3000 10000 Collector Current, IC (mA) Current Gain-Bandwidth Product, fT(MHz) Current Gain-Bandwidth Product 1000 500 300 IC=10IB 100 50 VCE=6V 30 10 5 3 1 1 3 10 30 100 300 1000 3000 10000 Collector Current, IC (mA) UTC assumes no responsibility for equipment fa.


9012 9013 BC546


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