Document
UNISONIC TECHNOLOGIES CO., LTD
9013
NPN EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
FEATURES
* High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012
1 TO-92
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
9013L-x-T92-B
9013G-x-T92-B
TO-92
9013L-x-T92-K
9013G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter B: Base C: Collector
Pin Assignment 123 EBC EBC
Packing
Tape Box Bulk
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-030.C
9013
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector dissipation
PC 625 mW
Junction Temperature
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage
SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on)
CLASSIFICATION OF hFE1
TEST CONDITIONS IC=-100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=1V, IC=10mA
MIN TYP MAX UNIT
40 V
20 V
5V
100 nA
100 nA
64 120 40 120 300
0.16 0.6
V
0.91 1.2
V
0.6 0.67 0.7
V
RANK RANGE
D 64-91
E 78-112
F 96-135
G 112-166
H 144-202
I 190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-030.C
9013
TYPICAL CHARACTERICS
Collector Current, IC (mA)
20 18 16 14 12 10
8 6 4 2 0
0
Static Characteristic
IB=140μA IB=120μA IB=100μA IB=80μA IB=60μA IB=40μA IB=20μA
10 20
30 40 50
Collector - Emitter Voltage, VCE (V)
NPN EPITAXIAL SILICON TRANSISTOR
Dc Current Gain, hFE
1000 500 300
Dc Current Gain
VCE=1V
100
50 30
10
5 3
1 1 3 5 10 30 50 100 300 1000 3000 10000 Collector Current, IC (mA)
Saturation Voltage, VBE(SAT), VCE(SAT) (mV)
10000
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
IC=10IB
3000
1000
500 300
VBE (SAT)
100
50 30
VCE (SAT)
10 1 3 10 30 100 300 1000 3000 10000
Collector Current, IC (mA)
Current Gain-Bandwidth Product, fT(MHz)
Current Gain-Bandwidth Product
1000
500 300
IC=10IB
100 50 VCE=6V 30
10 5 3
1 1 3 10 30 100 300 1000 3000 10000
Collector Current, IC (mA)
UTC assumes no responsibility for equipment fa.